INTEGRATED CIRCUIT SYSTEM INCLUDING NITRIDE LAYER TECHNOLOGY
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United States of America Patent
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app pub date -
Oct 8, 2012
filing date -
Jul 5, 2006
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Abandoned
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Abstract
An integrated circuit method for manufacturing an integrated circuit system including loading a wafer into a processing chamber and pre-purging the processing chamber with a first ammonia gas. Depositing a first nitride layer over the wafer and purging the processing chamber with a second ammonia gas. Depositing a second nitride layer over the first nitride layer that is misaligned with the first nitride layer. Post-purging the processing chamber with a third ammonia gas and purging the processing chamber with a nitrogen gas.
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