Ion etching of growing InP nanocrystals using microwave

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United States of America Patent

PATENT NO 8435418
APP PUB NO 20130043210A1
SERIAL NO

13645855

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Abstract

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High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.

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Patent Owner(s)

Patent OwnerAddress
THE FLORIDA STATE UNIVERSITY RESEARCH FOUNDATION INC2000 LEVY AVE TALLAHASSEE FL 32310

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lovingood, Derek D Tallahassee, US 5 10
Strouse, Geoffrey F Tallahassee, US 15 44

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