WAFER STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT MANUFACTURING
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United States of America Patent
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Issued Date -
Feb 28, 2013
app pub date -
Aug 25, 2011
filing date -
Aug 25, 2011
priority date (Note) -
Abandoned
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Abstract
A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.
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