SEMICONDUCTOR STRUCTURE WITH GALVANICALLY-ISOLATED SIGNAL AND POWER PATHS

United States of America Patent

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Feb 19, 2013
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Feb 28, 2013
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Aug 26, 2011
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Aug 26, 2011

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Abstract

A galvanic die has signal structures and a transformer structure that provide galvanically-isolated signal and power paths for a high-voltage die and a low-voltage die, which are both physically supported by the galvanic die and electrically connected to the signal and transformer structures of the galvanic die.

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Patent Owner	Address
NATIONAL SEMICONDUCTOR CORPORATION	12500 TI BOULEVARD M/S 3999 DALLAS TX 75243

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Inventor Name	Address	# of filed Patents	Total Citations
French, William	San Jose, US	81	1457
Gabrys, Ann	Santa Clara, US	23	249
Hopper, Peter J	San Jose, US	249	2547
Johnson, Peter	Sunnyvale, US	187	3016
Lee, Dok Won	Mountain View, US	54	325

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SEMICONDUCTOR STRUCTURE WITH GALVANICALLY-ISOLATED SIGNAL AND POWER PATHS

Number of patents in Portfolio can not be more than 2000

United States of America Patent

13218682

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DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
February 28, 2013	US,20130049916,A1 US20130049916A1	FIRST PUBLISHED PATENT APPLICATION
February 19, 2013	US,8378776,B1 US8378776B1	GRANTED PATENT AS FIRST PUBLICATION

APP PUB NO	20130049916A1
SERIAL NO	13218682
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13218682

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