High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same
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United States of America Patent
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Issued Date -
Feb 28, 2013
app pub date -
Aug 30, 2011
filing date -
Aug 30, 2011
priority date (Note) -
Abandoned
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Abstract
Semiconductor substrates with high aspect ratio recesses formed therein are described. The high aspect ratio recesses have bottom surface profile characteristics that promote formation of initial growth sites of plated metal as compared to the side surfaces of the recesses. Processes for making and plating the recesses are also disclosed. The metal-plated high aspect ratio recesses can be used as X-ray gratings in Phase Contrast X-ray imaging apparatuses.
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