Semiconductor device using charge pump circuit

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United States of America Patent

PATENT NO 8582366
APP PUB NO 20130058167A1
SERIAL NO

13667373

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Abstract

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A semiconductor device including a plurality of capacitance units connected in parallel between a first voltage and a second voltage. Each of the plurality of capacitance units includes: a capacitance element connected with the first voltage; and a capacitance disconnecting circuit connected between the second voltage and the capacitance element. The capacitance disconnecting circuit includes a non-volatile memory cell with a threshold voltage changed based on a change of a leakage current which flows from the capacitance element, and blocks off the leakage current based on a rise of the threshold voltage of the non-volatile memory cell when the leakage current exceeds a predetermined value.

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Patent Owner(s)

  • RENESAS ELECTRONICS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wada, Masahiro Kanagawa, JP 114 1390

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