HIGH TEMPERATURE OPERATION SILICON CARBIDE GATE DRIVER
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United States of America Patent
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Issued Date -
Mar 14, 2013
app pub date -
Sep 9, 2010
filing date -
Sep 9, 2010
priority date (Note) -
Abandoned
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Abstract
Versions of the present invention have many advantages, including operation under high temperatures, or high frequencies while providing the required current for switching a SiC VJFET, providing electrical isolation and minimizing dv/dt noise. One embodiment is a silicon carbide gate driver comprising a first group of silicon on insulator devices and passive components and a second group of silicon carbide devices. The first group may have equivalent temperatures of operation and equivalent frequencies of operation as the second group.
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