Method for producing a light-emitting diode

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United States of America Patent

PATENT NO 8828768
APP PUB NO 20130065342A1
SERIAL NO

13499232

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Abstract

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A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.

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Patent Owner(s)

Patent OwnerAddress
OSRAM OLED GMBHWERNERWERKSTRASSE 2 REGENSBURG 93049

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Drechsel, Philipp Regensburg, DE 20 47
Stauβ, Peter Regensburg, DE 5 5

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