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Abstract

The pattern inspection apparatus includes: an irradiator irradiating a sample with an electron beam; an electron detector detecting an amount of electrons generated on the sample having a pattern formed thereon, by the irradiation of the electron beam; an image processor generating a SEM image of the pattern on the basis of the electron amount; and a controller acquiring defect position information on the pattern formed on the sample from an optical defect inspection device. The controller specifies a defect candidate pattern from the SEM image on the basis of the defect position information and judges whether a defect in the defect candidate pattern is to be transferred onto a wafer. The controller determines a view field of the SEM image on the basis of the defect position information and specifies the defect candidate pattern from image information on patterns displayed in the view field.

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First Claim