SEMICONDUCTOR CHIP INTEGRATING HIGH AND LOW VOLTAGE DEVICES
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United States of America Patent
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app pub date -
Jun 30, 2012
filing date -
Sep 20, 2011
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Abstract
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations. For example, the semiconductor chip may include a NPN bipolar transistor, PNP bipolar transistor, a diode, an N channel DMOS transistor and the like. The first doped well being configured as a base of the DMOS transistor, a P channel DMOS transistor and the like.
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