Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell
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United States of America Patent
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Issued Date -
Mar 21, 2013
app pub date -
Sep 21, 2011
filing date -
Sep 21, 2011
priority date (Note) -
Abandoned
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Abstract
Disclosed is a method for making a nickel film for use as an electrode of an n-p diode or solar cell. A light source is used to irradiate an n-type surface of the n-p diode or solar cell, thus producing electron-hole pairs in the n-p diode or solar cell. For the electric field effect at an n-p interface, electrons drift to and therefore accumulate on the n-type surface. With a plating agent, the diode voltage is added to the chemical potential for electroless plating of nickel on the n-type surface. The nickel film can be used as a buffer layer between a contact electrode and the diode or solar cell. The nickel film reduces the contact resistance to prevent a reduced efficiency of the diode or solar cell that would otherwise be caused by diffusion of the atoms of the electrode in following electroplating.
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