Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germanium
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United States of America Patent
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Dec 10, 2013
Grant Date -
Mar 21, 2013
app pub date -
Jul 27, 2012
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Jul 29, 2011
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Abstract
A method for depositing a silicon oxide layer on a substrate including a silicon region and a silicon-germanium region, including the steps of: forming a very thin silicon layer having a thickness ranging from 0.1 to 1 nm above silicon-germanium; and depositing a silicon oxide layer on the substrate.
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