METHODS AND APPARATUS FOR INCLUDING AN AIR GAP IN CARBON-BASED MEMORY DEVICES
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United States of America Patent
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Issued Date -
Mar 28, 2013
app pub date -
Sep 22, 2011
filing date -
Sep 22, 2011
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Abstract
In some aspects, a reversible resistance-switching metal-insulator-metal stack is provided that includes a first conducting layer, a carbon nano-tube (“CNT”) material above the first conducting layer, a second conducting layer above the CNT material, and an air gap between the first conducting layer and the CNT material. Numerous other aspects are provided.
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