Semiconductor device

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United States of America Patent

PATENT NO 9129891
SERIAL NO

13626137

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Abstract

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A semiconductor device includes a first semiconductor layer provided over a substrate; an electron transit layer contacting a top of the first semiconductor layer; and a second semiconductor layer contacting a top of the electron transit layer, wherein the electron transit layer has a dual quantum well layer having a structure where a first well layer, an intermediate barrier layer, and a second well layer are sequentially stacked, an energy of a conduction band of the intermediate barrier layer is lower than an energy of conduction band of the first semiconductor layer and the second semiconductor layer, and a ground level is generated in the first and second well layers, and a first excitation level is generated in the dual quantum well layer.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGYTOKYO JAPAN TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Endoh, Akira Machida, JP 11 93
Watanabe, Issei Tokyo, JP 6 1

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