Embedded capacitor and method of fabricating the same
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United States of America Patent
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Oct 8, 2013
Grant Date -
Mar 28, 2013
app pub date -
Sep 22, 2011
filing date -
Sep 22, 2011
priority date (Note) -
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status (Latency Note)
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Abstract
Methods are provided for forming a capacitor. In one embodiment, a method comprises providing an insulator material layer over a substrate, etching at least one via in the insulator material layer and depositing a contact material fill in the at least one via to form a first set of contacts. The method further comprises etching the insulator material layer adjacent at least one contact of the first set of contacts to form at least one void, depositing a dielectric material layer over the at least one void and over the first set of contacts and depositing a contact material fill in the at least void to form a second set of contacts.
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