Etch stop layer for memory cell reliability improvement
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United States of America Patent
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Feb 25, 2014
Grant Date -
Mar 28, 2013
app pub date -
Sep 14, 2012
filing date -
Dec 10, 2004
priority date (Note) -
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Abstract
A memory device and a method of making the memory device are provided. A first dielectric layer is formed on a substrate, a floating gate is formed on the first dielectric layer, a second dielectric layer is formed on the floating gate, a control gate is formed on the second dielectric layer, and at least one film, including a conformal film, is formed over a surface of the memory device.
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