Semiconductor device having DMOS integration
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United States of America Patent
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Jun 16, 2015
Grant Date -
Apr 11, 2013
app pub date -
Oct 11, 2011
filing date -
Oct 11, 2011
priority date (Note) -
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Abstract
Semiconductor devices that include a trench with conductive material for connecting a VDMOS device to a LDMOS device are described. The semiconductor devices include a substrate having a first region and a second region, wherein the second region is disposed on the first region. A trench extends from a top surface of the second region to the first region. The semiconductor substrate includes a VDMOS device formed proximate to the top surface of the second region and a LDMOS device that is also formed proximate to the top surface of the second region. The drain region of the VDMOS device is electrically connected to the source region of the LDMOS device by way of a conductive material disposed in the trench.
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