DIFFUSION BARRIER AND METHOD OF FORMATION THEREOF

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United States of America Patent

SERIAL NO

13688229

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Abstract

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A method of forming a device is presented. The method includes providing a structure having first and second regions. A diffusion barrier is formed between at least a portion of the first and second regions. The diffusion barrier comprises cavities that reduce diffusion of elements between the first and second regions.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES SINGAPORE PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHONG, Yung Fu Singapore, SG 57 1015
CHU, Sanford Singapore, SG 54 649
QUEK, Elgin Singapore, SG 125 2318
TAN, Shyue Seng Singapore, SG 99 974
TEO, Lee Wee Singapore, SG 40 506

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