CPP Device with Improved Current Confining Structure and Process
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United States of America Patent
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app pub date -
Dec 1, 2012
filing date -
Aug 27, 2007
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Abandoned
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Abstract
Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided
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