MOS TRANSISTOR WITH NO HUMP EFFECT

United States of America Patent

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Issued Date
Apr 18, 2013
app pub date
Oct 11, 2012
filing date
Oct 13, 2011

priority date (Note)
Abandoned

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Abstract

A MOS transistor formed in an active area of a semiconductor substrate and having a polysilicon gate doped according to a first conductivity type, the gate including two lateral regions of the second conductivity type.

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Patent Owner(s)

Patent Owner	Address
STMICROELECTRONICS ROUSSET SAS	13790 ROUSSET

International Classification(s)

H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Lopez, Laurent	Rousset, FR	8	28

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MOS TRANSISTOR WITH NO HUMP EFFECT

Number of patents in Portfolio can not be more than 2000

United States of America Patent

13649972

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SERIAL NO	13649972
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