Semiconductor device with contacts and metal interconnects and method of manufacturing the semiconductor device
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United States of America Patent
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Oct 13, 2015
Grant Date -
Apr 18, 2013
app pub date -
Oct 16, 2012
filing date -
Oct 17, 2011
priority date (Note) -
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Abstract
A semiconductor device includes a substrate, an interlayer insulation layer, first transistors, a multilayered interconnect layer, capacitance devices, metal interconnects, and first contacts. Interlayer insulation films are disposed over the substrate. The first transistors are disposed to the substrate and buried in the interlayer insulation layer. The first transistor has at least a gate electrode and a diffusion electrode. A multilayered interconnect layer is disposed over the interlayer insulation film. The capacitance devices are disposed in the multilayered interconnect layer. The metal interconnect is in contact with the upper surface of the gate electrode and buried in the interlayer insulation layer. The first contact is coupled to the diffusion layer of the first transistor and buried in the interlayer insulation layer. The metal interconnect includes a material identical with that of the first contact.
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