Semiconductor device with recess having inclined sidewall and method for manufacturing the same
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United States of America Patent
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May 27, 2014
Issued Date -
N/A
app pub date -
Aug 30, 2012
filing date -
Oct 14, 2011
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor layer, an insulating film, a gate electrode, a drain electrode, and a source electrode. The semiconductor layer includes an active layer and is formed on a semi-insulating semiconductor substrate, and a tapered recess area having an inclined sidewall is formed on a surface of the semiconductor layer. The insulating film is formed on the semiconductor layer and has a through hole for exposing the recess area. The through hole has a tapered sidewall which is inclined at an angle smaller than the sidewall of the recess area. The gate electrode is formed so as to fill the recess area and the through hole. The drain electrode and the source electrode are formed at positions on opposite sides of the recess area on the semiconductor layer.
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