PROCESS FOR PREPARING A BERYLLIUM OXIDE LAYER ON A SEMICONDUCTOR SUBSTRATE

United States of America Patent

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Issued Date
Apr 18, 2013
app pub date
Oct 12, 2011
filing date
Oct 12, 2011

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Abandoned

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Abstract

A process for creating a beryllium oxide film on the surface of a semiconductor material is disclosed. The process is useful for making gate dielectric layers for metal-oxide-semiconductor (MOS) devices, particularly III-V semiconductor devices.

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Patent Owner	Address
BOARD OF REGENTS UNIVERSITY OF TEXAS SYSTEM	210 WEST 7TH STREET AUSTIN TX 78701

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Banerjee, K Sanjay	Austin, US	1	0
Bersuker, Gennadi	Austin, US	1	0
YUM, Jung Hwan	Austin, US	2	3

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PROCESS FOR PREPARING A BERYLLIUM OXIDE LAYER ON A SEMICONDUCTOR SUBSTRATE

Number of patents in Portfolio can not be more than 2000

United States of America Patent

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