SEMICONDUCTOR DEVICE

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United States of America Patent

SERIAL NO

13706250

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Abstract

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A semiconductor device includes: a first semiconductor layer; a first electrode provided on a first surface side of the first semiconductor layer; a first insulating layer; and a second semiconductor layer. The first insulating layer is provided between the first semiconductor layer and the first electrode and configured to constrict current flowing between the first semiconductor layer and the first electrode. The second semiconductor layer has a first conductivity type and is provided at least on a path of the current constricted by the first insulating layer. The second semiconductor layer is in contact with the first electrode. The second semiconductor layer contains first impurities at a concentration higher than a concentration of impurities contained in the first semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA72-34 HORIKAWA-CHO SAIWAI-KU KAWASAKI-SHI KANAGAWA 2120013 ?2120013

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
TSUKUDA, Masanori Kanagawa, JP 23 117

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