Non-volatile memory cell containing an in-cell resistor

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United States of America Patent

PATENT NO 8879299
SERIAL NO

13552355

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Abstract

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A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide storage element, and a second electrode.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES INC951 SANDISK DRIVE LEGAL DEP MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yung-Tin Santa Clara, US 70 1376
Hou, Kun Milpitas, US 25 414
Lan, Zhida San Jose, US 26 258
Xu, Huiwen Sunnyvale, US 77 2926

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