METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 18, 2013
app pub date -
Mar 20, 2012
filing date -
Oct 18, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
According to one embodiment, a method for manufacturing a semiconductor device, includes: and forming, on an upper face of a silicon substrate, a plurality of concave portions extending in a first direction, performing, in a gas that contains fluorine or a fluoride, plasma processing on the silicon substrate in which the concave portions are formed. The method further includes performing, in a gas that contains hydrogen, thermal processing on the silicon substrate after completion of performing the plasma processing; forming an insulating film on an inner face of the concave portions after completion of performing the thermal processing; and forming a conductive film on the insulating film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully