Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions

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United States of America Patent

PATENT NO 8975170
APP PUB NO 20130098266A1
SERIAL NO

13280077

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Abstract

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Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.

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Patent Owner(s)

Patent OwnerAddress
SOLSTICE ADVANCED MATERIALS US INCC/O CORPORATION SERVICE COMPANY 251 LITTLE FALLS DRIVE WILMINGTON DE 19808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bhanap, Anil Shriram Milpitas, US 2 4
Fan, Wenya Campbell, US 14 165
Leung, Roger Yu-Kwan San Jose, US 11 169
Metin, Lea M San Jose, US 3 4
Spear, Richard A Santa Cruz, US 3 4
Xu, Helen X Sunnyvale, US 7 13
Zhou, Ligui Saratoga, US 13 450

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