Resistive memory and methods of processing resistive memory

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United States of America Patent

PATENT NO 8617959
APP PUB NO 20130099189A1
SERIAL NO

13691352

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the seam, and forming an electrode on the cell material and the seam.

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Patent Owner(s)

Patent OwnerAddress
OVONYX MEMORY TECHNOLOGY LLC1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sandhu, Gurtej S Boise, US 1223 33846
Smythe,, III John A Boise, US 35 292

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