SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20130099198A1
SERIAL NO

13419391

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Abstract

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According to one embodiment, a semiconductor light emitting element, including a first semiconductor layer with a first conductive type, a second semiconductor layer with a second conductive type, a semiconductor light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode having a mesh-shaped structure with a plurality of mesh shapes provided on the first semiconductor layer opposed to the semiconductor light emitting layer, a plurality of second electrodes provided on the second semiconductor layer opposed to the semiconductor light emitting layer, each of the second electrode having a dot shape and being superimposed with the center of each of the mesh shapes in plain view with parallel to a surface of the second semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
TANAKA, Akira Kanagawa-ken, JP 543 6826

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