Semiconductor device and method for manufacturing the same
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United States of America Patent
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Aug 26, 2014
Grant Date -
Apr 25, 2013
app pub date -
Oct 16, 2012
filing date -
Oct 24, 2011
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Abstract
A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×1018 atoms/cm3, preferably lower than or equal to 1×1018 atoms/cm3.
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