Semiconductor device and method for manufacturing the same
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United States of America Patent
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Sep 30, 2014
Grant Date -
Apr 25, 2013
app pub date -
Oct 16, 2012
filing date -
Oct 24, 2011
priority date (Note) -
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Abstract
A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.
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