Semiconductor devices having a recessed electrode structure
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United States of America Patent
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May 26, 2015
Grant Date -
Apr 25, 2013
app pub date -
Oct 11, 2012
filing date -
Oct 11, 2011
priority date (Note) -
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Abstract
An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.
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