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Abstract

A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot composed of single crystal silicon carbide, obtaining a silicon carbide substrate by slicing the ingot, and polishing a surface of the silicon carbide substrate. In the step of obtaining a silicon carbide substrate, the ingot is sliced such that cutting proceeds in a direction in which an angle formed with respect to a <11-20> direction or a <1-100> direction is 15±5° in an orthogonal projection on a {0001} plane. In the step of polishing a surface of the silicon carbide substrate, at least one of main surfaces of the silicon carbide substrate is polished while the entire surface of at least one of the main surfaces of the silicon carbide substrate is in contact with a polishing surface.

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First Claim