Compound semiconductor device and method for fabricating
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United States of America Patent
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Oct 20, 2015
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app pub date -
Sep 14, 2012
filing date -
Mar 19, 2010
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Abstract
A first GaN layer, a first AlGaN layer, a second GaN layer and a third GaN layer are formed in layers on a substrate. A second AlGaN layer is formed on the sidewall of an opening formed in the multilayer structure. A gate electrode is formed to fill an electrode trench in an insulating film. A portion of the insulating film between the gate electrode and the second AlGaN layer functions as a gate insulating film. A source electrode is formed above the gate electrode and a drain electrode is formed below the gate electrode. This configuration enables implementation of a miniatuarizable, reliable vertical HEMT that has a sufficiently high withstand voltage and high output power and is capable of a normally-off operation without problems that could otherwise result from the use of a p-type compound semiconductor.
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