Solid-state imaging device and manufacturing method therefor
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United States of America Patent
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Jan 6, 2015
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app pub date -
Jun 21, 2011
filing date -
Jun 30, 2010
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Abstract
A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.
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