Semiconductor device having a through contact and a manufacturing method therefor
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United States of America Patent
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May 27, 2014
Grant Date -
Apr 25, 2013
app pub date -
Oct 24, 2011
filing date -
Oct 24, 2011
priority date (Note) -
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Abstract
According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material.
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