Z-axis semiconductor fluxgate magnetometer
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United States of America Patent
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Sep 3, 2013
Grant Date -
Apr 25, 2013
app pub date -
Oct 19, 2011
filing date -
Oct 19, 2011
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Abstract
A z-axis fluxgate magnetometer is formed in a semiconductor wafer fabrication sequence, which significantly reduces the size and cost of the fluxgate magnetometer. The semiconductor wafer fabrication sequence forms a vertical magnetic core structure, a first wire structure wound around the magnetic core structure, and a second wire structure wound around the magnetic core structure.
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