Magnetic memory element having an adjustment layer for reducing a leakage magnetic field from a reference layer and magnetic memory thereof
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United States of America Patent
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Jan 21, 2014
Grant Date -
Apr 25, 2013
app pub date -
Sep 5, 2012
filing date -
Oct 21, 2011
priority date (Note) -
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Abstract
According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.
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