MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
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United States of America Patent
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Issued Date -
Apr 25, 2013
app pub date -
Sep 5, 2012
filing date -
Oct 24, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
According to one embodiment, a magnetic memory element includes a memory layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a first nonmagnetic layer provided on the memory layer, and a reference layer provided on the first nonmagnetic layer, having magnetic anisotropy perpendicular to a film surface, and having an invariable magnetization direction. An area of the memory layer is larger than that of the reference layer. Magnetization in an end portion of the memory layer is smaller than that in a central portion of the memory layer.
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