Method of forming self-assembled patterns using block copolymers, and articles thereof
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United States of America Patent
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May 13, 2014
Grant Date -
Apr 25, 2013
app pub date -
Dec 10, 2012
filing date -
Sep 4, 2009
priority date (Note) -
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Abstract
A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface. Also disclosed are semiconductor devices.
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