Multi-level memory cell with continuously tunable switching
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United States of America Patent
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Sep 9, 2014
Grant Date -
Apr 25, 2013
app pub date -
Oct 21, 2011
filing date -
Oct 21, 2011
priority date (Note) -
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Abstract
The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.
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