Non-volatile semiconductor memory device and method of reading data thereof
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United States of America Patent
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May 13, 2014
Grant Date -
Apr 25, 2013
app pub date -
Mar 21, 2012
filing date -
Oct 19, 2011
priority date (Note) -
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Abstract
A memory string includes a semiconductor layer, a charge accumulation layer, and a conductive layer. The semiconductor layer extends in a direction perpendicular to the semiconductor substrate and functions as a body of a memory cell. The charge accumulation layer may accumulate charges. The conductive layer sandwiches the charge accumulation layer with the semiconductor layer, and functions as a gate of the memory cell. The control circuit performs, before a read operation, a refresh operation of rendering the selected memory cell and a non-selected memory cell conductive to conduct a current from a first end to a second end of the memory string.
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