Dual-Port Memory and a Method Thereof

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United States of America Patent

APP PUB NO 20130100757A1
SERIAL NO

13626013

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Abstract

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A dual-port memory is provided. The dual-port memory includes a first single-port memory and a second single-port memory. The first single-port memory is configured to store data in an even address of the dual-port memory. The second single-port memory is configured to store data in an odd address of the dual-port memory. The dual-port memory simultaneously performs a read operation to read data from the odd address and a write operation to write data into the even address. The dual-port memory simultaneously performs a read operation to read data from the even address and a write operation to write data into the odd address.

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Patent Owner(s)

Patent OwnerAddress
MAISHI ELECTRONIC (SHANGHAI) LTDROOM 1402 NO 289 CHUNXIAO ROAD ZHANG JIANG HI-TECH PARK SHANGHAI 201203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yu, Mei Chengdu, CN 36 184
Zhang, Weihua Chengdu, CN 47 169

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