Method for processing a minute structure on a surface of the silicon substrate
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United States of America Patent
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Nov 29, 2016
Grant Date -
Apr 25, 2013
app pub date -
Oct 11, 2012
filing date -
Oct 20, 2011
priority date (Note) -
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Abstract
It is an object to provide a method for processing a silicon substrate that can reduce surface reflectance as much as possible. The method includes a first step of forming a thin film including a metal having higher electronegativity than silicon and having a plurality of openings on a silicon substrate, a second step of soaking the silicon substrate subjected to the first step in a hydrofluoric acid solution containing oxidizer, and a third step of soaking the silicon substrate subjected to the second step in an ammonia aqueous solution containing oxidizer. By performing the steps in the above order, a minute uneven structure is formed on a surface of the silicon substrate to reduce the reflectance.
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