Method of manufacturing semiconductor device
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United States of America Patent
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Jan 14, 2014
Grant Date -
Apr 25, 2013
app pub date -
Mar 1, 2012
filing date -
Oct 20, 2011
priority date (Note) -
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Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming an isolation trench in a substrate, and forming an amorphous layer on a sidewall surface of the isolation trench. The method further includes forming a sacrificial layer in the isolation trench via the amorphous layer, and forming an air gap layer on the sacrificial layer. The method further includes forming an air gap in the isolation trench under the air gap layer by removing the sacrificial layer after forming the air gap layer.
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