Method for controlling structure height
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United States of America Patent
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Oct 15, 2013
Grant Date -
Apr 25, 2013
app pub date -
Oct 21, 2011
filing date -
Oct 21, 2011
priority date (Note) -
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Abstract
Methods for controlling the height of semiconductor structures are disclosed. Amorphous carbon is used as a stopping layer for controlling height variability. In one embodiment, the height of replacement metal gates for transistors is controlled. In another embodiment, the step height of a shallow trench isolation region is controlled.
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