METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 25, 2013
app pub date -
Oct 23, 2012
filing date -
Oct 24, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for manufacturing a MOSFET includes the steps of preparing a substrate (10) composed of silicon carbide, forming a gate oxide film (20) in contact with the substrate (10), and introducing nitrogen atoms in a region including an interface between the substrate (10) and the gate oxide film (20). Then, in the step of introducing nitrogen atoms, the substrate (10) on which the gate oxide film (20) has been formed is heated in an atmospheric gas formed by heating a nitriding process gas containing nitrogen atoms but not containing oxygen atoms to a temperature exceeding 1200° C., so that nitrogen atoms are introduced in the region including the interface between the substrate (10) and the gate oxide film (20).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully