Manufacturing method of grating

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United States of America Patent

PATENT NO 8821743
APP PUB NO 20130105439A1
SERIAL NO

13658043

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Abstract

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The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a patterned mask layer is formed on a surface of the substrate. Third, the substrate with the patterned mask layer is placed in a microwave plasma system. Fourth, a plurality of etching gases are guided into the microwave plasma system simultaneously to etch the substrate through three stages. The etching gas includes carbon tetrafluoride (CF4), argon (Ar2), and sulfur hexafluoride (SF6). Finally, the patterned mask layer is removed.

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Patent Owner(s)

Patent OwnerAddress
HON HAI PRECISION INDUSTRY CO LTDNEW TAIPEI CITY
TSINGHUA UNIVERSITYHAIDIAN DISTRICT BEIJING 100084

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Mo Beijing, CN 106 604
Fan, Shou-Shan Beijing, CN 1514 11778
Li, Qun-Qing Beijing, CN 328 1764
Zhang, Li-Hui Beijing, CN 58 249
Zhu, Zhen-Dong Beijing, CN 86 369

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