Synchronous embedded radio frequency pulsing for plasma etching
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United States of America Patent
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Mar 10, 2015
Grant Date -
May 2, 2013
app pub date -
Apr 27, 2012
filing date -
Oct 28, 2011
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Abstract
Methods for etching a substrate are provided herein. In some embodiments, a method of etching a substrate may include generating a plasma by providing only a first RF signal having a first frequency and a first duty cycle; applying only a second RF signal to bias the plasma towards the substrate, wherein the second RF signal has the first frequency and a second duty cycle different than the first duty cycle; adjusting a phase variance between the first and second RF signals to control an ion energy distribution in the plasma; and etching the substrate with the plasma.
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