Semiconductor device, method of manufacturing the semiconductor device, and a thin film

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United States of America Patent

PATENT NO 9029839
APP PUB NO 20130105772A1
SERIAL NO

13659461

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Abstract

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A semiconductor device containing a novel cyclosiloxane polymer showing electroconductivity or semiconductivity has a charge transport layer comprising a plasma polymer containing structural units (A) each having a transition metal as a central metal and structural units (B) each situated between structural units (A) adjacent to each other and having a cyclosiloxane skeleton. The charge transport layer is formed by plasma polymerization of an organic metal compound having the transition metal as the central metal and the cyclosiloxane compound in a reactor.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATION135-0061 TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashi, Yoshihiro Kanagawa, JP 277 5483
Kawahara, Jun Kanagawa, JP 89 2415

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